Single N-Channel Enhancement Mode Field Effect Transistor

General Features

AG奔驰宝马多人版●  VDS = 100V,ID = 110A 

AG奔驰宝马多人版    RDS(ON) < 7mΩ @ VGS= 10V 

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high EAS

AG奔驰宝马多人版● Excellent package for good heat dissipation

AG奔驰宝马多人版● Special process technology for high ESD capability