Single N-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 85V,ID = 120A 

    RDS(ON) < 4.9mΩ @ VGS= 10V 

● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

AG奔驰宝马多人版● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

AG奔驰宝马多人版● Special process technology for high ESD capability