The SIN6806 uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. It can be used in a wide variety of applications.
Single N-Channel Enhancement Mode Field Effect Transistor
● VDS = 68V,ID = 80A
RDS(ON) < 5mΩ @ VGS= 10V
AG奔驰宝马多人版● Lead free and Green Device Available
AG奔驰宝马多人版● Low Rds-on to Minimize Conductive Loss
● High avalanche Current