AG奔驰宝马多人版

产品详情

Single N-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 80V,ID = 80A 

    RDS(ON) < 7.2mΩ @ VGS= 10V 

AG奔驰宝马多人版● Lead free and Green Device Available

● Low Rds-on to Minimize Conductive Loss

AG奔驰宝马多人版● High avalanche Current