Single N-Channel Enhancement Mode Field Effect Transistor

General Features

AG奔驰宝马多人版●  VDS = 30V,ID = 120A 

    RDS(ON) < 2.5mΩ @ VGS= 10V 

AG奔驰宝马多人版● High density cell design for ultra low Rdson

● Fully characterized Avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability