AG奔驰宝马多人版

产品详情

Single N-Channel Enhancement Mode Field Effect Transistor

General Features

AG奔驰宝马多人版●  VDS = 68V,ID = 80A 

AG奔驰宝马多人版    RDS(ON) < 6mΩ @ VGS= 10V 

AG奔驰宝马多人版●  Advanced trench process technology

AG奔驰宝马多人版●  Ultra low on-resistance with low gate charge

AG奔驰宝马多人版●  Fast switching and reverse body recovery

AG奔驰宝马多人版●  Fully characterized avalanche voltage and current