The SID6806A is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SID6808L is assembled in high reliability and qualified assembly house.
Single N-Channel Enhancement Mode Field Effect Transistor
AG奔驰宝马多人版● VDS = 68V,ID = 80A
AG奔驰宝马多人版 RDS(ON) < 6mΩ @ VGS= 10V
AG奔驰宝马多人版● Advanced trench process technology
AG奔驰宝马多人版● Ultra low on-resistance with low gate charge
AG奔驰宝马多人版● Fast switching and reverse body recovery
AG奔驰宝马多人版● Fully characterized avalanche voltage and current