AG奔驰宝马多人版

产品详情

Single N-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 60V,ID = 80A 

AG奔驰宝马多人版    RDS(ON) < 7mΩ @ VGS= 10V 

●  Advanced trench process technology

●  Ultra low on-resistance with low gate charge

●  Fast switching and reverse body recovery

AG奔驰宝马多人版●  Fully characterized avalanche voltage and current