AG奔驰宝马多人版The SID6808L is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SID6808L is assembled in high reliability and qualified assembly house.
Single N-Channel Enhancement Mode Field Effect Transistor
● VDS = 60V,ID = 80A
RDS(ON) < 7mΩ @ VGS= 10V
AG奔驰宝马多人版● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
AG奔驰宝马多人版● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation