AG奔驰宝马多人版The SIB30Y26 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Single N-Channel Enhancement Mode Field Effect Transistor
● VDS = 30V,ID = 120A
RDS(ON) < 4mΩ @ VGS= 10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation