The SIP4606 is the N and P Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery loss are needed in a very small outline surface mount package.
Complementary Enhancement Mode Field Effect Transistor
● VDS = 30V,ID = 7.1A AND VDS = -30V,ID = -6A
RDS(ON) < 21mΩ @ VGS= 10V AND RDS(ON) < 30mΩ @ VGS= -10V
AG奔驰宝马多人版 RDS(ON) < 32mΩ @ VGS= 4.5V AND RDS(ON) < 40mΩ @ VGS= -4.5V
● Advanced Trench Process Technology
AG奔驰宝马多人版● Rugged and reliable
AG奔驰宝马多人版● Surface Mount package.