AG奔驰宝马多人版

产品详情

Dual N-Channel Enhancement Mode Field Effect Transistor

General Features

AG奔驰宝马多人版●  VDS = 20V,ID = 13A 

AG奔驰宝马多人版    RDS(ON) < 5.5mΩ @ VGS=4.5V 

AG奔驰宝马多人版    RDS(ON) < 7mΩ @ VGS=2.5V 

AG奔驰宝马多人版●  High power and current handing capability

AG奔驰宝马多人版●  Lead free product is acquired

●  Surface Mount package.

●  ESD Rating: 2000V HBM