AG奔驰宝马多人版

产品详情

Dual P-Channel Enhancement Mode Field Effect Transistor

General Features

AG奔驰宝马多人版●  VDS = -30V,ID = -5.3A 

    RDS(ON) < 45mΩ @ VGS=-10V 

AG奔驰宝马多人版    RDS(ON) < 70mΩ @ VGS=-4.5V 

AG奔驰宝马多人版●  Advanced Trench Process Technology

AG奔驰宝马多人版●  Rugged and reliable

AG奔驰宝马多人版●  Surface Mount package.