AG奔驰宝马多人版The SIT2812E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.
Dual N-Channel Enhancement Mode Field Effect Transistor
● VDS = 20V,ID = 8A
AG奔驰宝马多人版 RDS(ON) < 11mΩ @ VGS=4.5V
AG奔驰宝马多人版 RDS(ON) < 15mΩ @ VGS=2.5V
● Advanced Trench Process Technology
AG奔驰宝马多人版● High Density Cell Design for Ultra Low On-Resistance
● Rugged and reliable
● Surface Mount package.