AG奔驰宝马多人版

产品详情

Dual N-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 20V,ID = 10A 

AG奔驰宝马多人版    RDS(ON) < 10mΩ @ VGS=4.5V 

AG奔驰宝马多人版    RDS(ON) < 15mΩ @ VGS=2.5V 

AG奔驰宝马多人版●  Advanced Trench Process Technology

AG奔驰宝马多人版●  High Density Cell Design for Ultra Low On-Resistance

●  Rugged and reliable

●  Surface Mount package.