AG奔驰宝马多人版

产品详情

Dual N-Channel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 20V,ID = 6A 

AG奔驰宝马多人版    RDS(ON) < 21mΩ @ VGS=4.5V 

AG奔驰宝马多人版    RDS(ON) < 27mΩ @ VGS=2.5V 

AG奔驰宝马多人版●  Advanced Trench Process Technology

●  High Density Cell Design for Ultra Low On-Resistance

AG奔驰宝马多人版●  Rugged and reliable

AG奔驰宝马多人版●  Surface Mount package.