The SIS530 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Dual N-Nchannel Enhancement Mode Field Effect Transistor
AG奔驰宝马多人版● VDS = 20V,ID = 5A
AG奔驰宝马多人版 RDS(ON) < 20mΩ @ VGS=4.5V
RDS(ON) < 25mΩ @ VGS=2.5V
AG奔驰宝马多人版● Advanced trench MOSFET process technology
● Ultra low on-resistance with low gate charge
AG奔驰宝马多人版● Surface Mount Package