AG奔驰宝马多人版

产品详情

Dual P-Nchannel Enhancement Mode Field Effect Transistor

General Features

●  VDS =-20V,ID = -4.5A

    RDS(ON) < 65mΩ @ VGS=-4.5V

AG奔驰宝马多人版    RDS(ON) < 90mΩ @ VGS=-2.5V

●  Advanced trench MOSFET process technology

AG奔驰宝马多人版●  Ultra low on-resistance with low gate charge

AG奔驰宝马多人版●  Surface Mount Package