The SIS2435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Dual P-Nchannel Enhancement Mode Field Effect Transistor
● VDS =-20V,ID = -5A
RDS(ON) < 35mΩ @ VGS=-4.5V
AG奔驰宝马多人版 RDS(ON) < 50mΩ @ VGS=-2.5V
● Advanced trench MOSFET process technology
● Ultra low on-resistance with low gate charge
AG奔驰宝马多人版● Surface Mount Package