AG奔驰宝马多人版

产品详情

Single P-Nchannel Enhancement Mode Field Effect Transistor

General Features

●  VDS =-12V,ID = -8A

    RDS(ON) < 17mΩ @ VGS=-4.5V

AG奔驰宝马多人版    RDS(ON) < 21mΩ @ VGS=-2.5V

●  Advanced trench MOSFET process technology

AG奔驰宝马多人版●  Ultra low on-resistance with low gate charge

●  Surface Mount Package