AG奔驰宝马多人版The SIS8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .
Dual N-Nchannel Enhancement Mode Field Effect Transistor
● VDS = 20V,ID = 5A
AG奔驰宝马多人版 RDS(ON) < 21mΩ @ VGS=4.5V
RDS(ON) < 27mΩ @ VGS=2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package