AG奔驰宝马多人版The SIE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Single N-Nchannel Enhancement Mode Field Effect Transistor
● VDS = 30V,ID = 5.8A
AG奔驰宝马多人版 RDS(ON) < 28mΩ @ VGS=10V
AG奔驰宝马多人版 RDS(ON) < 31mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package