The SIO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
Single P-Nchannel Enhancement Mode Field Effect Transistor
● VDS = -30V,ID = -4.2A
AG奔驰宝马多人版 RDS(ON) < 50mΩ @ VGS=-10V
AG奔驰宝马多人版 RDS(ON) < 64mΩ @ VGS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
AG奔驰宝马多人版● Surface Mount Package