AG奔驰宝马多人版

产品详情

Single N-Nchannel Enhancement Mode Field Effect Transistor

General Features

●  VDS = 60V,ID = 0.3A

    RDS(ON) < 1Ω @ VGS=10V

    RDS(ON) < 1.3Ω @ VGS=5V

AG奔驰宝马多人版●  High Power and current handing capability

●  Lead free product is acquired

AG奔驰宝马多人版●  Surface Mount Package

●  ESD Rating:HBM 2300V